University of New Mexico
Student Chapter
Optical Society of America
|
||
|
University of New Mexico
|
||
| HOME | ||
|---|---|---|
| ABOUT | ||
| EVENTS | ||
| ARCHIVE | ||
| LINKS | ||
| CONFERENCE | ||
| JOIN | ||
Theory of Nonlinear Sagnac effect in Semiconductor LasersA 70th Birthday SeminarProf. Peter G. EliseevCenter for High Technology Materials, University of New Mexico and P. N. Lebedev Physics Institute, Moscow, RussiaIn laser gyros, the Sagnac effect in a ring cavity is used to get a sensitivity to the rotation rate. Semiconductor ring lasers (SRL) are not yet gyro devices, and one reason for this is low sensitivity due to small size. The scale factor  . This is not good (typically n* is between 3.5 and 4.5 in semiconductors like GaAs). However the involvement of the dispersion gives a way to influence the scale factor dynamically. The nonlinear interaction of electromagnetic waves leads to a perturbation of optical parameters of the medium in vicinity of strong wave frequency. It is characterized with a steep variation of index providing ranges of slow and fast light. The dynamic anomalous dispersion ( ) is suitable to reduce n* and increase the rotation sensitivity (~100 times). We consider the concept of fast-light Sagnac effect in vicinity of points of critically anomalous dispersion (where group velocity goes to infinity).
Friday, February 3rd, at 10:00 amCenter for High Technology Materials, Room 101Biography of Prof. Peter G. Eliseev. Download announcement as PDF file. View photos from the event. |
|
University of New Mexico |
Page last modified: 2007-07-16
in the active ring laser is known to be proportional to ratio A/L, where A is ring area, L is its perimeter. A problem with this is to increase response at a limited ring size. We consider here if the nonlinear optics of semiconductors can be used for this purpose.