Prof. Peter G. Eliseev

Center for High Technology Materials, University of New Mexico

Peter G. Eliseev graduated from Moscow State University (Russia) in 1959. Since 1963 he is a scientific coworker at P. N. Lebedev Physics Institute (Moscow, Russia), last time as a Principal Researcher. Since 1995, he is Research Professor at the Center for High Technology Materials, University of New Mexico. He is engaged in semiconductor laser technology and physics since 1962, developed several types of lasers starting from homojunction structures, then continued development of a number of heterostructures (introducing for the first time InGaAsP/InP and InGaAsSb/GaSb laser diodes), and then developing quantum-size heterostructure including ultra-low threshold quantum dot laser. He demonstrated and interpreted several phenomena in semiconductor lasers: voltage saturation, coherent collapse, asymmetrical nonlinear interaction of spectral modes, bistability in the external cavity, optoelectronic signal, frequency chirping, etc. He is author or coauthor of more than 500 publications including several books. He was awarded the State Prize in Science and Technology of the USSR in 1984 and the N. Holonyak OSA Award in 2004. He is a Senior member of IEEE, member of OSA and the Russian Academy of Natural Sciences.

Prof. Peter G. Eliseev is the 2004 recipient of OSA's Nick Holonyak Jr. Award - for his "original and pioneering contributions to the physics and technology of semiconductor lasers, beginning with homojunctions, progressing to heterostructures of InaAsP/InP, InGaAsSb/GaSb and including ultra-low-threshold quantum-dot structures". Congratulations!